Method for doping semiconductor structures and the semiconductor device thereof

US8962369B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Roger Loo · Leuven, BE
• Frederik Leys · Gentbrugge, BE
• Matty Caymax · Leuven, BE

Key dates

• Filing date: Jul 10, 2013
• Grant date: Feb 24, 2015
• Expiry date: Jul 10, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/791
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for introducing species into a strained semiconductor layer comprising: providing a substrate comprising a first region comprising an exposed strained semiconductor layer, loading the substrate in a reaction chamber, then forming a conformal first species containing-layer by vapor phase deposition (VPD) at least on the exposed strained semiconductor layer, and thereafter performing a thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer and activating at least part of the diffused first species in the strained semiconductor layer.