Method and device to achieve self-stop and precise gate height
US8962407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.