Dense chevron finFET and method of manufacturing same

US8963294B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jochen Beintner · Wappingers Falls, US
• Thomas Ludwig · Sindelfingen, DE
• Edward J. Nowak · South Burlington, US

Key dates

• Filing date: Sep 19, 2007
• Grant date: Feb 24, 2015
• Expiry date: Feb 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.