Semiconductor device including cladded base plate

US8963321B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Lenniger · Erwitte, DE
• Andre Uhlemann · Dortmund, DE
• Olaf Hohlfeld · Warstein, DE

Key dates

• Filing date: Jan 24, 2013
• Grant date: Feb 24, 2015
• Expiry date: Jan 24, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1.