Patent · US Active

SRAM layouts

US8964453B2 · kind B2 · utility

13Cited by
6References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2013
Grant dateFeb 24, 2015
Priority date
Expiry dateJun 27, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/10
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Roughly described, the cell layout in an SRAM array is re-arranged such that the gate electrodes for transistors for which flexibility to use one channel length is desired, are formed along a different track from those for transistors for which flexibility to use a different channel length is desired. Not only does such a re-arrangement permit optimization of device ratios, but also in certain implementations can also reduce, rather than increase, cell area. Specific example layouts are described. The invention also involves layout files, macrocells, lithographic masks and integrated circuit devices incorporating these principles, as well as fabrication methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.