Structure for electron-beam pumped edge-emitting device and methods for producing same

US8964796B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Thomas Wunderer · Palo Alto, US
• John E. Northrup · Palo Alto, US
• Mark R. Teepe · Menlo Park, US
• Zhihong Yang · San Jose, US
• Christopher L. Chua · San Jose, US
• Noble M. Johnson · Menlo Park, US

Key dates

• Filing date: Jun 18, 2013
• Grant date: Feb 24, 2015
• Expiry date: Jul 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).