Patent · US Active

Semiconductor structure and method for fabricating semiconductor layout

US8966410B2 · kind B2 · utility

1Cited by
11References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 29, 2013
Grant dateFeb 24, 2015
Priority date
Expiry dateOct 29, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating a semiconductor layout includes providing a first layout having a plurality of line patterns and a second layout having a plurality of connection patterns, defining at least a first to-be-split pattern overlapping with the connection pattern among the line patterns, splitting the first to-be-split pattern at where the first to-be-split pattern overlapping with the connection pattern, decomposing the first layout to form a third layout and a fourth layout, and outputting the third layout and the further layout to a first mask and a second mask respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.