Methods of forming a layer of silicon on a layer of silicon/germanium

US8969190B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stephan Kronholz · Dresden, DE
• Joachim Patzer · Rohrbach, DE

Key dates

• Filing date: Aug 24, 2012
• Grant date: Mar 3, 2015
• Expiry date: Aug 31, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are various methods of forming a layer of silicon on a layer of silicon/germanium. In one example, a method disclosed herein includes forming a silicon/germanium material on a semiconducting substrate, after forming the silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into the deposition chamber during the heating process, and, after the temperature of the substrate reaches the desired silicon formation temperature, forming a layer of silicon on the silicon/germanium material.