Methods of forming a circuit that includes a cross-coupling gate contact structure wherein the circuit is to be manufactured using a triple patterning process
US8969199B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/959
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, patterning a hard mask layer using three patterned photoresist etch masks, wherein a first feature corresponding to a portion, but not all, of a cross-coupling gate contact structure is present in a first of the three patterned photoresist etch masks and a second feature corresponding to a portion, but not all, of the cross-coupling gate contact structure is present in a second or a third of the three patterned photoresist etch masks, patterning a layer of insulating material using the patterned hard mask layer as an etch mask, and forming a cross-coupling gate contact structure in a trench in the layer of insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.