Embedded resistors for resistive random access memory cells

US8969844B1 · kind B1 · utility

Assignee

• INTERMOLECULAR, INC. · US

Inventor

• Yun Wang · San Jose, US

Key dates

• Filing date: Dec 23, 2013
• Grant date: Mar 3, 2015
• Expiry date: Dec 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/84

Abstract

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The methods may include forming a first layer on a substrate, where the first layer is operable as a bottom electrode. The methods may also include forming a second layer, where the second layer includes a resistive portion and a resistive switching portion. The resistive portion may be configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The resistive portion may have a substantially constant resistance. The resistive portion may include, at least in part, a conductive silicon oxide. The resistive switching portion may be configured to switch between a first resistive state and a second resistive state. The resistive switching portion may include, at least in part, silicon oxide. The methods may also include forming a third layer, where the third layer is operable as a top electrode.