Inventor · San Jose, CA, US

Yun Wang

119Patents
9h-index
32Co-inventors
76Inventor score

Filing activity: Sep 29, 2004 → Sep 6, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9142764B1 Methods of forming embedded resistors for resistive random access memory cells Electricity 324 Active
US8569104B2 Transition metal oxide bilayers Electricity 25 Active
US8072795B1 Biploar resistive-switching memory with a single diode per memory cell Physics 23 Active
US8686389B1 Diffusion barrier layer for resistive random access memory cells Electricity 22 Active
US9178000B1 Resistive random access memory cells having shared electrodes with transistor devices Electricity 19 Active
US8288297B1 Atomic layer deposition of metal oxide materials for memory applications Electricity 13 Active
US9324767B1 Superconducting junctions Electricity 12 Active
US9246085B1 Shaping ReRAM conductive filaments by controlling grain-boundary density Electricity 10 Active
US8866121B2 Current-limiting layer and a current-reducing layer in a memory device Physics 10 Active
US8551809B2 Reduction of forming voltage in semiconductor devices Electricity 9 Active
US8698119B2 Nonvolatile memory device using a tunnel oxide as a current limiter element Electricity 9 Active
US8681530B2 Nonvolatile memory device having a current limiting element Physics 8 Active
US8809159B2 Radiation enhanced resistive switching layers Electricity 7 Active
US9224951B1 Current-limiting electrodes Electricity 7 Active
US9246087B1 Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells Electricity 7 Active
US9246091B1 ReRAM cells with diffusion-resistant metal silicon oxide layers Electricity 6 Active
US8817524B2 Resistive random access memory cells having metal alloy current limiting layers Electricity 6 Active
US8787066B2 Method for forming resistive switching memory elements with improved switching behavior Electricity 6 Active
US9018037B1 Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices Electricity 6 Active
US9129894B2 Embedded nonvolatile memory elements having resistive switching characteristics Physics 6 Active
US8432177B2 High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates Emerging Cross-Sectional Technologies 5 Active
US8686386B2 Nonvolatile memory device using a varistor as a current limiter element Electricity 5 Active
US8969844B1 Embedded resistors for resistive random access memory cells Electricity 5 Active
US8654560B2 Variable resistance memory with a select device Electricity 5 Active
US8852996B2 Carbon doped resistive switching layers Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.