Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8969845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2014 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jun 9, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.