Multi-level cell operation using zinc oxide switching material in non-volatile memory device
US8971088B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | May 18, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a non-volatile memory device includes providing an as-fabricated state-change device having an aluminum doped zinc oxide material first electrode, a p++ polysilicon material second electrode, and a zinc oxide (ZnO) material state-change material there between. A first amplitude bias voltage is applied to the first electrode of the as-fabricated state-change device causing the ZnO material to change form an as-fabricated state to a first state. A second amplitude bias voltage having an opposite polarity having an amplitude similar to the first amplitude is applied to cause the ZnO to change from the first state to a second state substantially similar as the as-fabricated state. A third amplitude bias voltage having a same polarity to the first bias voltage and having an amplitude dissimilar to the first bias voltage is applied to cause the ZnO to change from the second state to a third state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.