Method and circuit for switching a memristive device in an array
US8971091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/81
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.