MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current
US8971102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2013 |
| Grant date | Mar 3, 2015 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns a method for writing to a MRAM cell comprising a magnetic tunnel junction formed from a storage layer having a storage magnetization; a reference layer having a reference magnetization; and a tunnel barrier layer included between the sense and storage layers; and a current line electrically connected to said magnetic tunnel junction; the method comprising: passing a heating current in the magnetic tunnel junction for heating the magnetic tunnel junction; passing a field current for switching the storage magnetization in a written direction in accordance with the polarity of the field current. The magnitude of the heating current is such that it acts as a spin polarized current and can adjust the storage magnetization; and the polarity of the heating current is such as to adjust the storage magnetization substantially towards said written direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.