Patent · US Active

Select transistor tuning

US8971119B2 · kind B2 · utility

10Cited by
19References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 16, 2014
Grant dateMar 3, 2015
Priority date
Expiry dateMay 16, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0409
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a nonvolatile memory array in which a select transistor includes a charge storage element, the threshold voltage of the select transistor is monitored, and if the threshold voltage deviates from a desired threshold voltage range, charge is added to, or removed from the charge storage element to return the threshold voltage to the desired threshold voltage range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.