Patent · US Active

Test structure and method to facilitate development/optimization of process parameters

US8975094B2 · kind B2 · utility

3Cited by
3References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2013
Grant dateMar 10, 2015
Priority date
Expiry dateJan 21, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/12
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A test structure and method are provided to facilitate developing or optimizing a fabrication process by determining values of one or more lithography process parameters for use in semiconductor device fabrication. The test structure is configured to facilitate determining values of the one or more fabrication process parameters, and includes a plurality of test structure components arranged on a substrate according to a test pattern. The test pattern may be based on: varying distances between the test structure components according to a first rule; varying distances between centers of the test structure components according to a second rule; and/or varying at least one dimension of the test structure components according to a third rule. The method may further include determining dimensions of one or more components of the test structure using, for example, scatterometry, and using the dimensions of the components to ascertain one or more fabrication process parameters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.