Abner Bello
13Patents
4h-index
22Co-inventors
52Inventor score
Filing activity: Jan 21, 2013 → Jan 15, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8889500B1 | Methods of forming stressed fin channel structures for FinFET semiconductor devices | Electricity | 20 | Active |
| US8975142B2 | FinFET channel stress using tungsten contacts in raised epitaxial source and drain | Electricity | 9 | Active |
| US9093302B2 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Electricity | 7 | Active |
| US9419137B1 | Stress memorization film and oxide isolation in fins | Electricity | 6 | Active |
| US9318388B2 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Electricity | 4 | Active |
| US8975094B2 | Test structure and method to facilitate development/optimization of process parameters | Electricity | 3 | Active |
| US9911634B2 | Self-contained metrology wafer carrier systems | Electricity | 1 | Active |
| US10818528B2 | Self-contained metrology wafer carrier systems | Electricity | 0 | Active |
| US9117930B2 | Methods of forming stressed fin channel structures for FinFET semiconductor devices | Electricity | 0 | Active |
| US10343253B2 | Methods and systems for chemical mechanical planarization endpoint detection using an alternating current reference signal | Performing Operations; Transporting | 0 | Active |
| US10242895B2 | Self-contained metrology wafer carrier systems | Electricity | 0 | Active |
| US10931143B2 | Rechargeable wafer carrier systems | Electricity | 0 | Active |
| US9281249B2 | Decoupling measurement of layer thicknesses of a plurality of layers of a circuit structure | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.