FinFET channel stress using tungsten contacts in raised epitaxial source and drain

US8975142B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Abhijeet Paul · Poway, US
• Abner Bello · Clifton Park, US
• Vimal Kamineni · Mechanicville, US
• Derya Deniz · McKinney, US

Key dates

• Filing date: Apr 25, 2013
• Grant date: Mar 10, 2015
• Expiry date: Jul 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

Performance of a FinFET is enhanced through a structure that exerts physical stress on the channel. The stress is achieved by a combination of tungsten contacts for the source and drain, epitaxially grown raised source and raised drain, and manipulation of aspects of the tungsten contact deposition resulting in enhancement of the inherent stress of tungsten. The stress can further be enhanced by epitaxially re-growing the portion of the raised source and drain removed by etching trenches for the contacts and/or etching deeper trenches (and corresponding longer contacts) below a surface of the fin.