Semiconductor device with buried gate and method for fabricating the same
US8975173B2 · kind B2 · utility
1Cited by
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18Claims
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Key dates
| Filing date | Jan 7, 2014 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes buried gates formed over a substrate, storage node contact plugs which are formed over the substrate and include a pillar pattern and a line pattern disposed over the pillar pattern, and a bit line structure which is formed over the substrate and isolates adjacent ones of the storage node contact plugs from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.