Methods of improving tungsten contact resistance in small critical dimension features
US8975184B2 · kind B2 · utility
38Cited by
78References
19Claims
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Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Sep 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of filling features with low-resistivity tungsten layers having good fill without use of a nucleation layer are provided. In certain embodiments, the methods involve an optional treatment process prior to chemical vapor deposition of tungsten in the presence of a high partial pressure of hydrogen. According to various embodiments, the treatment process can involve a soaking step or a plasma treatment step. The resulting tungsten layer reduces overall contact resistance in advanced tungsten technology due to elimination of the conventional tungsten nucleation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.