Silicon based selector element
US8975610B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2013 |
| Grant date | Mar 10, 2015 |
| Priority date | — |
| Expiry date | Dec 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
Abstract
Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a titanium oxide-silicon-titanium oxide multilayer stack. Electrode materials may include one of ruthenium, titanium nitride, or carbon. The control element can include a silicon nitride-silicon-silicon nitride multilayer stack. Electrode materials may include titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.