Patent · US Active

Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material

US8975615B2 · kind B2 · utility

20Cited by

39References

21Claims

0Family size

Assignee

Soraa Laser Diode, Inc. · US

Inventors

Andrew Felker · Fremont, US
Nicholas Andrew Vickers · Hayward, US
Rafael I. Aldaz · Santa Clara, US
David Press · San Francisco, US
Nicholas J. Pfister · Goleta, US
James W. Raring · Lompoc, US
Mathew C. Schmidt · Lompoc, US
Kenneth John Thomson · Fremont, US

Key dates

Filing date	Nov 8, 2011
Grant date	Mar 10, 2015
Priority date	—
Expiry date	Nov 8, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/01
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.