Patent · US Active

Substrate for mirrors for EUV lithography

US8976927B2 · kind B2 · utility

3Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 28, 2013
Grant dateMar 10, 2015
Priority date
Expiry dateFeb 28, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG21K1/06
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Substrates suitable for mirrors which are used at wavelengths in the EUV wavelength range have a main body (2) and a polishing layer (3). The polishing layer (3) has a thickness of less than 10 μm and a root-mean-square roughness of less than 0.5 nm and the main body (2) is produced from an aluminum alloy. Moreover, a highly reflective layer (6) is provided on the polishing layer (3) of the substrate (1) of the EUV mirror (5).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.