One hundred millimeter SiC crystal grown on off-axis seed
US8980445B2 · kind B2 · utility
22Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.