Patent · US Active

Semiconductor device and method of manufacturing thereof

US8980687B2 · kind B2 · utility

2Cited by

2References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ivan Nikitin · Regensburg, DE
Stefan Landau · Usingen, DE
Joachim Mahler · Regensburg, DE
Alexander Heinrich · Bad Abbach, DE
Ralf Wombacher · Burglengenfeld, DE

Key dates

Filing date	Feb 8, 2012
Grant date	Mar 17, 2015
Priority date	—
Expiry date	Apr 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/351
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes providing a transfer foil. A plurality of semiconductor chips is placed on and adhered to the transfer foil. The plurality of semiconductor chips adhered to the transfer foil is placed over a multi-device carrier. Heat is applied to laminate the transfer foil over the multi-device carrier, thereby accommodating the plurality of semiconductor chips between the laminated transfer foil and the multi-device carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.