Method of forming semiconductor device
US8980701B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes the following steps. At least a fin structure is provided on a substrate and a gate structure partially overlapping the fin structure is formed. Then, a dielectric layer is formed on the substrate. Subsequently, a first etching process is performed to remove apart of the dielectric layer to form a first spacer surrounding the gate structure and a second spacer surrounding a sidewall of the fin structure, and a protective layer is formed in-situ to cover the gate structure and the first spacer. Finally, a second etching process is performed to remove a part of the protective layer and totally remove the second spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.