Semiconductor device with buried gate electrode structures

US8980714B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Marko Lemke · Dresden, DE
• Rolf Weis · Dresden, DE
• Stefan Tegen · Dresden, DE

Key dates

• Filing date: Jul 3, 2013
• Grant date: Mar 17, 2015
• Expiry date: Jul 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern from a first surface into a semiconductor substrate. An array isolation region including a portion of the semiconductor substrate separates the first and second trench patterns. At least the first trench pattern includes array trenches and a contact trench which is structurally connected with the array trenches. A buried gate electrode structure is provided in a lower section of the first and second trench patterns in a distance to the first surface. A connection plug is provided between the first surface and the gate electrode structure in the contact trench. Gate electrodes of semiconductor switching devices integrated in the same semiconductor portion can be reliably separated and internal gate electrodes can be effectively connected in a cost-effective manner.