Memory cells having storage elements that share material layers with steering elements and methods of forming the same

US8981331B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Yung-Tin Chen · Santa Clara, US
• Chuanbin Pan · Sunnyvale, US
• Andrei Mihnea · Boise, US
• Steven Maxwell · Santee, US
• Kun Hou · Taipei, TW

Key dates

• Filing date: Mar 4, 2013
• Grant date: Mar 17, 2015
• Expiry date: Apr 16, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/957

Abstract

In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.