ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications
US8981335B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 6, 2013 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Nov 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Resistive random access memory (ReRAM) cells can include a ZnTe switching layer and TiN or Pt electrodes. The combination of the switching layer of ZnTe and the electrodes of TiN or Pt is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. High temperature anneal of the ZnTe switching layer can further improve the performance of the ReRAM cells. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.