Resistor and manufacturing method thereof
US8981527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2011 |
| Grant date | Mar 17, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at two opposite ends in the resistor region, performing an etching process to remove the polysilicon dummy gate to form a first trench and remove portions of the doped regions to form two second trenches, and forming a metal gate in the first trench to form a transistor having the metal gate and metal structures respectively in the second trenches to form a resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.