Lithographic material stack including a metal-compound hard mask

US8986921B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Daniel C. Edelstein · White Plains, US
• Bryan G. Morris · Cohoes, US
• Tuan A. Vo · Albany, US
• Christopher J. Waskiewicz · Rexford, US
• Yunpeng Yin · Guilderland, US

Key dates

• Filing date: Jan 15, 2013
• Grant date: Mar 24, 2015
• Expiry date: May 20, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/094
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A lithographic material stack including a metal-compound hard mask layer is provided. The lithographic material stack includes a lower organic planarizing layer (OPL), a dielectric hard mask layer, and the metal-compound hard mask layer, an upper OPL, an optional anti-reflective coating (ARC) layer, and a photoresist layer. The metal-compound hard mask layer does not attenuate optical signals from lithographic alignment marks in underlying material layers, and can facilitate alignment between different levels in semiconductor manufacturing.