Patent · US Active

Method of manufacturing a semiconductor device with device separation structures

US8987090B2 · kind B2 · utility

4Cited by

3References

10Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Marko Lemke · Dresden, DE
Rolf Weis · Dresden, DE
Stefan Tegen · Dresden, DE

Key dates

Filing date	Jul 3, 2013
Grant date	Mar 24, 2015
Priority date	—
Expiry date	Jul 3, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device includes introducing at least a first and a second trench pattern including array trenches from a first surface into a semiconductor substrate, wherein an array isolation portion of the semiconductor substrate separates the first and second trench patterns. A buried gate electrode structure is provided in the first and second trench patterns at a distance to the first surface. In a single etch process, both a device separation trench having a first width is introduced into the array isolation portion and cell separation trenches having at most a second width that is smaller than the first width are introduced into semiconductor fins between the array trenches. Switching devices integrated in the same semiconductor die may be formed in a cost effective way.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.