Semiconductor process
US8987096B2 · kind B2 · utility
4Cited by
39References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.