Production of high-performance passive devices using existing operations of a semiconductor process

US8987107B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• Daniel Hahn · Portland, US
• Steven Leibiger · Falmouth, US
• Sunglyong Kim · Allen, US
• Christopher Nassar · Ballston Spa, US
• James Hall · Goleta, US

Key dates

• Filing date: Feb 19, 2013
• Grant date: Mar 24, 2015
• Expiry date: Feb 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

In one general aspect, a semiconductor processing method can include forming an N-type silicon region disposed within a P-type silicon substrate. The method can also include forming a field oxide (FOX) layer in the P-type silicon substrate where the FOX layer includes an opening exposing at least a portion of the N-type silicon region. The method can further include forming a reduced surface field (RESURF) oxide (ROX) layer having a first portion disposed on the exposed N-type silicon region and a second portion disposed on the FOX layer where the ROX layer includes a first dielectric layer in contact with the exposed N-type silicon region and a second dielectric layer disposed on the first dielectric layer. The method can further include forming a doped polysilicon layer having a first portion disposed on the first portion of the ROX layer and a second portion disposed on the second portion of the ROX layer.