Daniel Hahn
6Patents
2h-index
8Co-inventors
40Inventor score
Filing activity: Sep 25, 1998 → Jun 26, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6100125A | LDD structure for ESD protection and method of fabrication | Electricity | 29 | Expired |
| US6927460B1 | Method and structure for BiCMOS isolated NMOS transistor | Electricity | 4 | Expired |
| US8987107B2 | Production of high-performance passive devices using existing operations of a semiconductor process | Electricity | 1 | Active |
| US9537001B2 | Reduction of degradation due to hot carrier injection | Electricity | 1 | Active |
| US7824999B2 | Method for enhancing field oxide | Electricity | 1 | Active |
| US6972472B1 | Quasi self-aligned single polysilicon bipolar active device with intentional emitter window undercut | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.