Cross-coupling based design using diffusion contact structures

US8987128B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Mahbub Rashed · Cupertino, US
• Marc Tarabbia · Austin, US
• Chinh Nguyen · San Jose, US
• David Doman · Austin, US
• Juhan Kim · Boulder, US
• Xiang Qi · San Jose, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Jul 30, 2012
• Grant date: Mar 24, 2015
• Expiry date: Oct 16, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P90/02
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a first gate cut region across the first gate structure, and a second gate cut region across the second gate structure; providing a first gate contact over the first gate structure, and a second gate contact over the second gate structure; and providing a diffusion contact structure between the first and second gate cut regions to couple the first gate contact to the second gate contact.