Method of fabrication of through-substrate vias
US8987137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Oct 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a through-substrate-via structure. The method comprises providing a substrate having a front-side and an opposite back-side. A through-substrate via opening is formed in the front-side of the substrate. The through-substrate-via opening does not penetrate an outer surface of the back-side of the substrate. The through-substrate-via opening is filled with a solid fill material. Portions of the substrate from the outer surface of the back-side of the substrate are removed to thereby expose the fill material. At least portions of the exposed fill material are removed to form a back-side through-substrate via opening that traverses an entire thickness of the substrate. The back-side through-substrate via opening is filled with an electrically conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.