Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
US8993058B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Aug 27, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28264
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.