Multiple patterning process for forming trenches or holes using stitched assist features
US8993224B2 · kind B2 · utility
1Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2014 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/76
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.