Method of manufacturing tunneling magnetoresistive element
US8993351B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 20, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
[Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO.[Solving Means] The method of manufacturing a magnetoresistive element 1 according to the present invention includes laminating a first layer 30 on a base 10, the first layer 30 including a material containing at least one of Co, Ni, and Fe. Next, a second layer 40 is laminated on the first layer 30, the second layer 40 including Mg. Next, the Mg in the second layer 40 is oxidized to form MgO by applying an oxidation treatment to a laminated body including the first layer 30 and the second layer 40. Next, the second layer 40 is crystallized by applying a heat treatment to the laminated body, and the first layer 30 is caused to be perpendicularly magnetized. According to the manufacturing method, it is possible to manufacture a perpendicular magnetization-type CoFeB—MgO magnetic element without causing a problem arising from the deposition of MgO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.