Semiconductor devices and methods of forming the semiconductor devices including a retrograde well

US8994107B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• El Mehdi Bazizi · Saratoga Springs, US
• Francis Benistant · Singapore, SG

Key dates

• Filing date: Aug 27, 2012
• Grant date: Mar 31, 2015
• Expiry date: Oct 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/314

Abstract

Semiconductor devices and methods of forming semiconductor devices are provided herein. In an embodiment, a semiconductor device includes a semiconductor substrate. A source region and a drain region are disposed in the semiconductor substrate. A channel region is defined in the semiconductor substrate between the source region and the drain region. A gate dielectric layer overlies the channel region of the semiconductor substrate, and a gate electrode overlies the gate dielectric layer. The channel region includes a first carbon-containing layer, a doped layer overlying the first carbon-containing layer, a second carbon-containing layer overlying the doped layer, and an intrinsic semiconductor layer overlying the second carbon-containing layer. The doped layer includes a dopant that is different than carbon.