Multi-level memory array having resistive elements for multi-bit data storage
US8995166B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Aug 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistor array for multi-bit data storage without the need to increase the size of a memory chip or scale down the feature size of a memory cell contained within the memory chip is provided. The resistor array incorporates a number of discrete resistive elements to be selectively connected, in different series combinations, to at least one memory cell or memory device. In one configuration, by connecting each memory cell or device with at least one resistor array, a resistive switching layer found in the resistive switching memory element of the connected memory device is capable of being at multiple resistance states for storing multiple bits of digital information. During device programming operations, when a desired series combination of the resistive elements within the resistor array is selected, the resistive switching layer in the connected memory device can be in a desired resistance state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.