Inventor · San Jose, CA, US

David E. Lazovsky

50Patents
9h-index
18Co-inventors
75Inventor score

Filing activity: May 18, 2005 → Jun 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7309658B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 55 Active
US7544574B2 Methods for discretized processing of regions of a substrate Electricity 24 Active
US11817903B2 Coherent photonic computing architectures Physics 24 Active
US11509397B2 Balanced photonic architectures for matrix computations Physics 14 Active
US11835777B2 Optical multi-die interconnect bridge (OMIB) Physics 13 Active
US8163631B2 Methods for discretized processing and process sequence integration of regions of a substrate Emerging Cross-Sectional Technologies 11 Active
US7902063B2 Methods for discretized formation of masking and capping layers on a substrate Electricity 11 Active
US8084400B2 Methods for discretized processing and process sequence integration of regions of a substrate Emerging Cross-Sectional Technologies 11 Active
US7390739B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 10 Active
US7871928B2 Methods for discretized processing of regions of a substrate Electricity 7 Active
US7749881B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 7 Active
US12216318B2 Optical bridging element for separately stacked electrical ICs Physics 5 Active
US8995166B2 Multi-level memory array having resistive elements for multi-bit data storage Electricity 5 Active
US9362231B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 5 Active
US8193090B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 3 Active
US8803124B2 Creating an embedded reram memory from a high-K metal gate transistor structure Electricity 3 Active
US8039383B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regions Electricity 3 Active
US8058154B2 Methods for discretized processing and process sequence integration of regions of a substrate Emerging Cross-Sectional Technologies 3 Active
US8030772B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 3 Active
US8372759B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 2 Active
US7972972B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 2 Active
US8709943B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 2 Active
US8586485B2 Molecular self-assembly in substrate processing Emerging Cross-Sectional Technologies 1 Active
US9368400B2 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region Electricity 1 Active
US12242122B2 Multicomponent photonically intra-die bridged assembly Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.