Semiconductor structure with substitutional boron and method for fabrication thereof

US8999861B1 · kind B1 · utility

Assignee

• SuVolta, Inc. · US

Inventors

• Lance Scudder · Sunnyvale, US
• Pushkar Ranade · Los Gatos, US
• Charles Stager · Austin, US
• Lucian Shifren · San Jose, US
• Dalong Zhao · San Jose, US
• U.C. Sridharan · San Jose, US
• Michael Duane · Austin, US

Key dates

• Filing date: May 11, 2012
• Grant date: Apr 7, 2015
• Expiry date: May 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/761
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a semiconductor structure so as to have reduced junction leakage is disclosed. The method includes providing substitutional boron in a semiconductor substrate. The method includes preparing the substrate using a pre-amorphization implant and a carbon implant followed by a recrystallization step and a separate defect repair/activation step. Boron is introduced to the pre-amorphized region preferably by ion implantation.