Semiconductor structure and fabrication method thereof
US9000568B2 · kind B2 · utility
0Cited by
30References
12Claims
0Family size
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Key dates
| Filing date | Sep 26, 2011 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.