Patent · US Active

Power semiconductor module with pressed baseplate and method for producing a power semiconductor module with pressed baseplate

US9000580B2 · kind B2 · utility

1Cited by

1References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Torsten Groening · Paderborn, DE
Mark Essert · Lippstadt, DE
Christian Steininger · Tuntenhausen, DE
Roman Tschirbs · Soest, DE

Key dates

Filing date	Jan 25, 2013
Grant date	Apr 7, 2015
Priority date	—
Expiry date	Jan 25, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/3121
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a baseplate having a top side, an underside, and a depression formed in the baseplate. The depression extends into the baseplate proceeding from the top side. A thickness of the baseplate is locally reduced in a region of the depression. The power semiconductor module further includes a circuit carrier arranged above the depression on the top side of the baseplate such that the depression is interposed between the circuit carrier and the underside of the baseplate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.