Patent · US Active

Transistors having a gate comprising a titanium nitride layer

US9000596B2 · kind B2 · utility

0Cited by

5References

7Claims

0Family size

Assignee

STMicroelectronics (Crolles 2) SAS · FR

Inventors

Pierre Caubet · Le Versoud, FR
Sylvain Baudot · Dresden, DE

Key dates

Filing date	Jun 22, 2012
Grant date	Apr 7, 2015
Priority date	—
Expiry date	Oct 9, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.