Patent · US Active

Electrostatic chuck AlN dielectric repair

US9001489B2 · kind B2 · utility

7Cited by
8References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2012
Grant dateApr 7, 2015
Priority date
Expiry dateMay 30, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49746
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention generally relates to a refurbished electrostatic chuck and a method of refurbishing a used electrostatic chuck. Initially, a predetermined amount of dielectric material is removed from the used electrostatic chuck to leave a base surface. Then, the base surface is roughened to enhance the adherence of new dielectric material thereto. The new dielectric material is then sprayed onto the roughened surface. A mask is then placed over the new dielectric material to aid in the formation of mesas upon which a substrate will sit during processing. A portion of the new dielectric layer is then removed to form new mesas. After removing the mask, edges of the mesas may be smoothed and the refurbished electrostatic chuck is ready to return to service after cleaning.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.