Placing transistors in proximity to through-silicon vias
US9003348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2014 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Roughly described, the invention involves ways to characterize, take account of, or take advantage of stresses introduced by TSV's near transistors. The physical relationship between the TSV and nearby transistors can be taken into account when characterizing a circuit. A layout derived without knowledge of the physical relationships between TSV and nearby transistors, can be modified to do so. A macrocell can include both a TSV and nearby transistors, and a simulation model for the macrocell which takes into account physical relationships between the transistors and the TSV. A macrocell can include both a TSV and nearby transistors, one of the transistors being rotated relative to others. An IC can also include a transistor in such proximity to a TSV as to change the carrier mobility in the channel by more than the limit previously thought to define an exclusion zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.